• 100% functional compatibility to SLE 4428
• 1024 x 8 bit EEPROM organization of Data Memory
• 1024 x 1 bit Protection Memory
– Byte-wise write protection of Data Memory (one time programmable)
– Not alterable Manufacturer Code (chip coding and unique coding by application identifier RID according to ISO/IEC 7816-5)
• Data Memory alterable only after verification of 2 Byte PSC
• PSC verification trials limited by Error Counter
• Serial synchronous three-wire link protocol according to ISO/IEC 7816
– Byte-wise addressing
– End of processing indicated at data output
• Contact configuration and Answer-to-Reset (synchronous transmission) in accordance to standard ISO/IEC 7816
• Electrical characteristics
– Ambient temperature range -40 … +100°C for chip, -25 … +80°C for module
– Supply voltage 5V ± 10%
– Supply current < 1 mA
– EEPROM erase / write time 5 ms / 5 ms
– ESD protection typically 4,000 V
– EEPROM Endurance minimum 100,000 erase / write cycles1)
– Data retention for minimum of 10 years1)
• Advanced CMOS-technology optimized for security layout
– EEPROM-cells protected by shield
– Shielding of deeper layers via metal
– Sensory- and logical security functions
– No insulation of backside necessary
